4,6,8inch Aġġornament tal-Inventarju tal-Wafer tas-Silikon _202506

Jun 20, 2025 Ħalli messaġġ

Lott	Prodott	Dijametru	Kristall	Tip	Dopant	Orjentazzjoni	Ħxuna	Reżistività
501061S	il	200	Cz	P	B	100	725±25	1~100	200-300 a ti segwit minn 8000A PVD sputtered al-cu 0.5%
501201	Epitassjali	200	Cz	P	B	100	700~750	<0.1	P / b t1 ~ 50 / r1 ~ 50, mfg 22- jista '-2024
501202	Epitassjali	200	Cz	N	PH aħmar	100	700~750	0~0.05	N / ph t1 ~ 10 / r0.01 ~ 1, mfg 27- jista '-2024
522101	Illustrat	200	Cz	P	B	100	710~740	0.01~0.02
522102	Illustrat	200	Cz	P	B	100	710~740	0.009~0.02
522103	Illustrat	200	Cz	P	B	100	710~740	0.015~0.02
522104	Illustrat	200	Cz	P	B	100	705~745	0.014~0.022
522105	Illustrat	200	Cz	P	B	100	710~740	0.014~0.02
522106	Illustrat	200	Cz	P	B	100	725±15	0.001~0.003
522107	Illustrat	200	Cz	P	B	100	710~740	0.0025~0.0035
522108	Illustrat	200	Cz	P	B	100	725±15	0.005~0.01
522109	Illustrat	200	Cz	P	B	100	710~740	0.002~0.0033
522110	Illustrat	200	Cz	P	B	100	725±15	0.0035~0.004
522111	Illustrat	200	Cz	P	B	100	640±13	0.012~0.0175	LTO + Nolm
522112	Illustrat	200	Na	N	Bħala	100	725±15	0.001~0.003
522113	Illustrat	200	Cz	P	B	111	725±15	0.005~0.01
522114	Illustrat	200	Cz	P	B	100	725±50	1~65
522115	Illustrat	200	Cz	P	B	100	725±15	Inqas minn jew daqs 40
522116	Illustrat	200	Cz	P	B	100	725±15	0.002~0.003
522117	Illustrat	200	Cz	P	B	100	710~740	0.0033~0.005
522118	Illustrat	200	Cz	P	B	100	725±15	0.003~0.004
522119	Illustrat	200	Cz	P	B	100	725±15	0.001~0.003
522120	Illustrat	200	Cz	P	B	111	725±20	0.002~0.005
522121	Illustrat	200	Cz	P	B	100	725±15	0.003~0.0035
522122	Illustrat	200	Cz	P	B	100	725±15	0.008~0.02
522123	Illustrat	200	Cz	P	B	100	725±15	0.0023~0.004
522124	Inċiżi	200	Na	Na	Na	Na	745	Na	LTO + Nolm
522125	Illustrat	200	Cz	P	B	100	705~745	0.01~0.02	LTO + Nolm
SO617PAU	Sputtered au	150	Cz	P	B	100	500±15	10~25	Sputtered Ti30NM + AU100NM
PS241025006	Soi	200	Cz	P	B	100	650±5	8~12	Apparat: 30 ± 0 . 5μm, 0.01 ~ 0.02 ohm.cm / kaxxa: 1 ± 0.1μm, talja<110>
503141	Illustrat	100	Cz	P	B	110	20000±100	1~100
PS250407006	Soi	200	Cz	N	PH	100	725±10	1~10	Apparat: 2 ± 0.5μm / kaxxa: 1000nm ± 5%
PS250407007	Soi	200	Cz	N	PH	100	725±10	1~10	Apparat: 10 ± 0.5μm / kaxxa: 1000nm ± 5%
PS250407008	Soi	200	Cz	N	PH	100	725±10	1~10	Apparat: 3 ± 0.5μm / kaxxa: 1000nm ± 5%
505061	JGS1	100					555±7		DSP, sq ＜ 0.5nm, 10/5, ttv<5μm, Flat 32.5mm
505301	Ossidu + nitrurat	200	Cz	P	B	100	725±25	1~100	3μM Oxide termali +300 NM LPCVD Nitride
203171pw3pt	Pt sputtered	150	Cz	N	PH	100	675±25	0.001~0.005	3000A ossidu termali + ti50nm + pt 200nm
506162	Illustrat	200	Cz	N	PH	100	700~750	1000~12000	N / ph t1 ~ 10 / r0.01 ~ 1, mfg 27- jista '-2024